Samsung 990 EVO 1TB PCI-E 4.0 x4 NVMe M.2 2280 SSD - MZ-V9E1T0B/AMManufacturer Samsung Model Name 990 EVO Part Number MZ V9E1T0B AM Drive Capacity 1 TB NAND Samsung V NAND TLC Performance Max Sequential Read (MB s): 5000 Max Sequential Write (MB s): 4200 Random Read (4KB, QD32): 680,000 IOPS Random Write (4KB, QD32): 800,000 IOPS Random Read (4KB, QD1): 20,000 IOPS Random Write (4KB, QD1): 90,000 IOPS Type M. 2 2280 Interface PCIe Gen4. 0 x4 PCI E 5. 0 x2 NVMe (v2. 0) Encryption Class 0 (AES 256) TCG Opal v2. 0 MS

Over Voltage: 105 to 135% Rated Output Voltage

105 CFM Airflow Manufacturer Blacknoise Model IND-1238-28-12 Series NB-IP55 Serie 1238 Voltage 12

9 to 30 VDC Input Driving Sink Current Minimal: 1 mA

Red Hat Enterprise 7

Connectivity 1 x Intel I225 2

1 x16 slots

800 x 444 x 88mm

Maximum 500W (cTDP)

8 Amp Case Dimensions 1U Form Factor

0 Drive Support Includes 1 x 128GB SATA M

1 Surround Sound audio

Connection 4 Pin (PWM) Voltage 12V Speed At Duty Cycle 20%: 2300 RPM